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esmt/emp EMA1002 elite semiconductor memory technology inc./ elite micropower inc. publication date : may. 2009 revision : 4.0 1/16 1w mono audio power amplifier with headphone sense general description the EMA1002 is an audio power amplifier primarily designed for portable communication applications such as mobile phones and portable multimedia players (pmp). to an 8 btl load, it can deliver 1 watt of continuous average power with less than 1% distortion (thd+n) from a 5vdc supply. the EMA1002 is pin-compatible to national semi?s lm4890 with a superior (thd+n). it does not require output coupling capacitors or bootstrap capacitors, and is ideal for mobile phone and other low voltage applications where minimal power consumption is a primary requirement. the EMA1002 features a low-power consumption shutdown mode, and an internal thermal shutdown protection mechanism. advanced pop & click circuitry is built in to eliminate noises that would otherwise occur during turn-on and turn-off transitions. the ema1001 is unity-gain stable and can be configured by external gain-setting resistors. key specifications ? psrr at 217hz, vdd = 5v (fig. 1) 60db(typ.) ? power output at 5.0v & 1% thd 1w(typ.) ? power output at 2.6v & 1% thd 250mw(typ.) ? shutdown current 0.1a(typ.) features ? available in space-saving msop package ? ultra low current shutdown mode ? btl output driving capacitive loads ? improved pop & click circ uitry eliminating noises during turn-on and turn-off transitions ? 2.2 - 5.5v operation ? no output coupling capacitors, snubber networks or bootstrap capacitors required ? thermal shutdown protection ? unity-gain stable ? external gain configuration capability ? headphone amplifier mode applications ? mobile phones ? pdas and pmps ? portable electronic device connection diagram msop package order information EMA1002-50ma08grr/nrr 50 5.0v operation ma08 msop-8 package grr rohs (pb free) rating: -40 to 85c package in tape & reel nrr rohs & halogen free (by request) rating: -40 to 85c package in tape & reel
esmt/emp EMA1002 elite semiconductor memory technology inc./ elite micropower inc. publication date : may. 2009 revision : 4.0 2/16 order, mark & packing information package product id marking packing msop-8 EMA1002-50ma08grr 3k units tape & reel pin functions pin # pin name function 1 sdnb (shutdown) low level shutdown 2 bypass mid-supply voltage biasing, adding a bypass capacitor to improves psrr and noise immunity / turn-on time define 3 hp sense biased by mid-supply voltage / one-side audio input for differential signal 4 inn (-in) negative feedback for audio input 5 outp(vo1) positive(relative to inn) audio output to load 6 vdd power supply 7 gnd ground 8 outn(vo2) negative(relative to inn) audio output to load
esmt/emp EMA1002 elite semiconductor memory technology inc./ elite micropower inc. publication date : may. 2009 revision : 4.0 3/16 typical application figure 1. typical audio amplifier application circuit absolute maximum ratings (note 2) supply voltage 6.0v storage temperature -65c to +150c input voltage -0.3v to vdd +0.3v power dissipation (note 3) internally limited esd susceptibility (note 4) 2kv junction temperature 150c thermal resistance jc (msop) 56c/w ja (msop) 190c/w operating ratings temperature range -40c Q t a Q 85c supply voltage 2.0v Q v dd Q 5.5v electrical characteristics v dd = 5v (notes 1, 2, 8) the following specifications apply for the circuit shown in figu re 1 unless otherwise specified. limits apply for ta = 25c. conditions typical limit symbol parameter conditions (note 6) (notes 7, 9) units (limits) v in = 0v, hp sense=0v 4 8 ma (max) i dd quiescent power supply current v in = 0v, hp sense=5v 2.5 ma (max) i sd shutdown current v shutdown = 0v 0.1 1.0 a (max) v ih_sdnb shutdown voltage input high 1.2 v (min) v il_sdnb shutdown voltage input low 0.4 v (max) v ih_hpsense shutdown voltage input high 4 v (min) v il_hpsense shutdown voltage input low 2.5 v (max) v os output offset voltage 5 25 mv (max) thd = 1% (max); f = 1 khz 8 load, hp sense<2.5v 1.0 w p o output power thd = 1% (max); f = 1 khz 32 load, hp sense>4v 90 mw
esmt/emp EMA1002 elite semiconductor memory technology inc./ elite micropower inc. publication date : may. 2009 revision : 4.0 4/16 t wu wake-up time c bypass = 1f 100 220 ms (max) 140 c (min) t sd thermal shutdown temperature 160 180 c (max) thd+n total harmonic distortion + noise p o = 0.4 wrms; f = 1khz 0.04 % psrr (note 10) power supply rejection ratio v ripple = 200mv sine p-p input terminated with 10 ohms to ground 60 (f =217hz) 65 (f = 1khz) 55 db (min) t sdt shut down time 8 load 0.1 ms (max)
esmt/emp EMA1002 elite semiconductor memory technology inc./ elite micropower inc. publication date : may. 2009 revision : 4.0 5/16 electrical characteristics v dd = 2.6v (notes 1, 2, 8) the following specifications apply for the circuit shown in fi gure 1 unless otherwise specified. limits apply for ta = 25c. conditions typical limit symbol parameter conditions (note 6) (notes 7, 9) units (limits) v in = 0v, hp sense=0v 2.6 ma (max) i dd quiescent power supply current v in = 0v, hp sense=2.6v 1.5 ma (max) i sd shutdown current v shutdown = 0v 0.1 1.0 a (max) v ih_sdnb shutdown voltage input high 1.2 v (min) v il_sdnb shutdown voltage input low 0.4 v (max) v ih_hpsense shutdown voltage input high 2.1 v (min) v il_hpsense shutdown voltage input low 1.3 v (max) v os output offset voltage 5 25 mv (max) thd = 1% (max); f = 1 khz 8 load, hp sense<1.3v 0.25 w p o output power thd = 1% (max); f = 1 khz 32 load, hp sense>2.1v 20 mw t wu wake-up time c bypass =1uf 100 220 ms (max) 140 c (min) t sd thermal shutdown temperature 160 180 c (max) thd+n total harmonic distortion + noise p o = 0.2 wrms; f = 1khz 0.03 % psrr (note 10) power supply rejection ratio v ripple = 200mv sine p-p input terminated with 10 ohms to ground 55 (f =217hz) 60 (f = 1khz) db (min) t sdt shut down time 8 load 0.1 ms (max) note 1: all voltages are measured with respect to the ground pin, unless otherwise specified. note 2: absolute maximum ratings indicate limits beyond which damage to the device may occur. operating ratings indicate conditions for which the device is functional, but do not guarantee specific performance limits. electrical characteristics state dc and ac electrical specifications under pa rticular test conditions, which guarantee specific performance limits. this assumes that the device is within th e operating ratings. specifications are not guaranteed for parameters where no limit is given, however, the typica l value is a good indication of device performance. note 3: the maximum power dissipation must be derated at elevated temperatures and is dictated by t jmax , ja , and the ambient temperature t a . the maximum allowable power dissipation is pdmax = (t jmax ?t a )/ ja or the number given in absolute maximum ratings, whichever is lower. for the ema1001, see power derating curves for additional information. note 4: human body model, 100 pf discharged through a 1.5 k resistor. note 5: machine model, 220 pf?240 pf discharged through all pins. note 6: typicals are measured at 25c and represent the parametric norm. note 7: limits are guaranteed to emp?s aoql (average outgoing quality level). note 8: shutdown current is measured in a normal room environment. exposure to direct sunlight will increase isd by a maximum of 2a. note 9: datasheet min/max specification limits are guaranteed by design, test, or statistical analysis. note 10: psrr is a function of system gain. specificatio ns apply to the circuit in figure 1 where a v = 2. higher system gains will reduce psrr value by the amount of gain increase. a system ga in of 10 represents a gain increase of 14db. psrr will be reduced by 14db and applies to all operating voltages. external components description ( figure 1 ) components functional description 1. r 2 inverting input resistance for setting the closed-loop gain in conjunction with r f . this resistor also forms a high pass filter with c 2 at f c = 1/(2 r 2 c 2 ). 2. c 2 input coupling capacitor for blocking the dc voltage at the amplifier?s input terminals. also creates a high pass filter with c 2 at f c = 1/(2 r 2 c 2 ). refer to the section, proper selection of external components , for an explanation of how to determine the value of c 2 . 3. r f feedback resistance for setting the closed-loop gain in conjunction with r 2 . 4. c 1 supply bypass capacitor for providing power supply filtering. refer to the section, power supply bypassing , for information concerning proper placement and selection of the supply bypass capacitor, c 3 . 5. c 3 bypass pin capacitor for providing half-supply filtering. refer to the section, proper selection of external components , for information concerning proper placement and selection of c 3 .
esmt/emp EMA1002 elite semiconductor memory technology inc./ elite micropower inc. publication date : may. 2009 revision : 4.0 6/16 typical performance characteristics thd + noise vs output power @ v dd = 5.0v, r l = 8 , 1khz, a v = 2 psrr vs frequency @ v dd = 5.0v, r l = 8 , a v = 2 thd + noise vs output power @ v dd = 2.6v, r l = 8 , 1khz, a v = 2 psrr vs frequency @ v dd = 2.6v, r l = 8 , a v = 2 thd + noise vs output power, headphone mode @ v dd = 5v, r l = 32 , 1khz, a v = 1 f=1khz, rl=8ohm, av=2, c3=c1=1uf, bw=60khz (x=supply voltage, y=power out)
esmt/emp EMA1002 elite semiconductor memory technology inc./ elite micropower inc. publication date : may. 2009 revision : 4.0 7/16 vdd=3.3v, f=1khz, rl=8ohm, av=2,c3=c1=1uf, bw=60khz (x=output, y=power dissipation) output noise @ 5v output noise @ 2.6v thd+noise vs frequency @ 5.0v t hd+noise vs frequency @ 2.6v t hd+noise vs frequency @ 5v, headphone mode
esmt/emp EMA1002 elite semiconductor memory technology inc./ elite micropower inc. publication date : may. 2009 revision : 4.0 8/16 application information bridged configuration explanation as shown in figure 1 , the ema1001 has two operational amplifiers internally, a1 and a2, allowing for a few different amplifier configurations. a1?s gain is externally configurable, while a2 is internally fixed in a unity-gain, inverting configuration. the closed-loop gain of a1 is set by selecting the ratio of r f to r 2 , while a2?s gain is fixed by the two internal 20k resistors. figure 1 shows that the output of a1 serves as the input to a2, which results in both amplifiers producing signals identical in magnitude, but out of phase by 180. hence, the differential gain for the ic is a vd = 2 *(r f /r 2 ) by driving the load differentially through outputs v o1 and v o2 , a bridged mode amplifier configuration is established. bridged mode operation is different from the single-ended amplifier configuration where one side of the load is connected to ground. a bridge amplifier design has a few distinct advantages over the single-ended configuration, as it provides differential drive to the load, thus doubling output swing for a specified supply voltage. four times the output power is possible as compared to a single-ended amplifier under the same conditions. this increase in attainable output power assumes that the amplifier is not current limited or clipped. in order to choose an amplifier?s closed-loop gain without causing excessive clipping, please refer to the audio power amplifier design section. a bridge configuration, such as the one used in the ema1001, also creates a second advantage over single-ended amplifiers. since the differential outputs, v o1 and v o2 , are biased at half-supply, no net dc voltage exists across the load. this eliminates the need for an output coupling capacitor, which is required in a single supply, single-ended amplifier configuration. without an output coupling capacitor, the half-supply bias across the load would result in both increased internal ic power dissipation and also possible loudspeaker damage. power dissipation power dissipation is one of the major concerns in designing a quality amplifier -- the higher the power delivered to the load by a bridge amplifier, the higher the increase in internal power dissipation. since the ema1001 has two operational amplifiers in one package, the maximum internal power dissipation is 4 times that of a single-ended amplifier. the maximum power dissipation for a given application can be derived from the power dissipation graphs or from equation 1. p dmax = 4*(v dd ) 2 /(2 2 r l ) (1) it is critical to maintain the maximum junction temperature t jmax below 150c. t jmax can be determined from the power derating curves by using p dmax and the pc board foil area. by adding additional copper foil, the thermal resistance of the application can be reduced, resulting in higher p dmax . additional copper foil can be added to any of the leads connected to the ema1001. refer to the application information on the ema1001 reference design board for an example of good heat sinking. if t jmax still exceeds 150c, then additional changes must be made. these changes can include redu ced supply voltage, higher load impedance, or reduced ambient temperature. internal power dissipation is a function of output power. refer to the typical performance characteristics curves for power dissipation information for different output powers and output loading. power supply bypassing as with any amplifier, proper supply bypassing is critical for low noise performance and high power supply rejection. the capacitor location on both the bypass and power supply pins should be as close to the device as possible. typical applications employ a 5v regulator with 10f tantalum or electrolytic capacitor and a ceramic bypass capacitor, which aids in supply stability. this does not eliminate the need for bypassing the supply nodes of the ema1001. the selection of a bypass capacitor, especially c 3 , is dependent upon psrr requirements, click and pop performance (as in the section, proper selection of external components ), system cost, and size constraints. shutdown function the ema1001 contains a shutdown pin to externally turn off the amplifier?s bias circuitry. when a logic low is placed on the shutdown pin, this shutdown feature turns the amplifier off. by switching the shutdown pin to ground, the ema1001 supply current draw will be minimized in idle mode. the idle current may be greater than the typical value of 0.1a while the device is disabled with shutdown pin voltages less than 0.5vdc. idle current is measured with the shutdown pin grounded. in many applications, a microcontroller or microprocessor output is used to control the shutdown circuitry. they provide a quick, smooth transition into shutdown. another solution is to use a single-pole, single-throw switch in conjunct ion with an external pull-up resistor. when the switch is closed, the shutdown pin is connected to ground and disables the amplifier. if the switch is open, then the external pull-up resistor will enable the ema1001. this scheme guarantees that the shutdown pin will not float thus preventing unwanted state changes. proper selection of external components to optimize device and system performance, proper selection of external components is critical. while the ema1001 can support a wide range of external component combinations, careful selection of component values can maximize overall system quality. the ema1001 is unity-gain stable, which gives the designer maximum system flexibility. the ema1001 should be used in low gain configurations to minimize thd+n values, and maximize the signal to noise ratio. low gain configurations require large input signals to obtain a given output power. input signals equal to or greater than 1vrms are available from sources such as audio codecs. please refer to the section, audio power amplifier design , for a more complete explanation of proper gain selection. besides gain, one of the major considerations is the closed loop bandwidth of the amplifier. the bandwidth is primarily determined by the choice of external components shown in figure 1 . the input coupling capacitor, c 2 , forms a first order high pass filter, which limits low frequency response. this value should be chosen based on needed frequency response for a few distinct reasons. selection of input capacitor size for portable designs, large input capacitors are prohibited because they are both expensive and space hungry. to couple in low frequencies without severe attenuation, a certain sized capacitor is needed. but in many cases the speakers used in portable systems, whether internal or external, have little ability to reproduce signals below 100hz to 150hz. thus, using a large input capacitor may not increase actual system performance. in addition to system cost and size, click and pop performance is affected by the size of the input coupling capacitor, c 2 . a larger input coupling capacitor requires more charge to reach its quiescent dc voltage (nominally 1/2 v dd ). this charge
esmt/emp EMA1002 elite semiconductor memory technology inc./ elite micropower inc. publication date : may. 2009 revision : 4.0 9/16 comes from the output via the feedback and is apt to create pops upon device enable. thus, by minimizing the capacitor size based on necessary low frequency response, turn-on pops can be minimize d. besides minimizing the input capacitor size, careful co nsideration should be paid to the bypass capacitor value. bypass capacitor, c 3 , is the most critical component to minimize turn-on pops since it determines how fast the ema1001 turns on. the slower the ema1001?s outputs ramp to their quiescent dc voltage (nominally 1/2v dd ), the smaller the turn-on pop. choosing c 3 equal to 1.0f along with a small value of c 2 , (in the range of 0.1f to 0.39f), should produce a virtually clickless and popless shutdown function. while the device will function properly, (no oscillatio ns or motor-boating), with c 3 equal to 0.1f, the device will be much more susceptible to turn-on clicks and pops. thus, a value of c 3 equal to 1.0f is recommended in all but the most cost sensitive designs. audio power amplifier design a 1w/8 audio amplifier given: power output 1 wrms load impedance 8 input level 1 vrms input impedance 20 k bandwidth 100 hz?20 khz 0.25 db a designer must first determine the minimum supply rail to obtain the specified output power. by extrapolating from the output power vs supply voltage graphs in the typical performance characteristics section, the supply rail can be easily found. in more applications, 5v is chosen as a standard voltage for the supply rail. extra supply voltage creates headroom, which allows the ema1001 to reproduce peaks in excess of 1w without producing audible distortion. at this stage, the designer must make sure that the power supply choice along with the output impedance does not violate the conditions described in the power dissipation section. once the power dissipation equations are addressed, the required differential gain can be determined from equation 3. a vd R (p o r l ) 1/2 /vin = vorms/vinrms (3) r f /r 2 = a vd /2 from equation 3, the minimum a vd is 2.83; use a vd = 3. since the desired input impedance is 20 k , and with an a vd gain of 3, a ratio of 1.5:1 of r f to r 2 results in an allocation of r 2 = 20 k and r f = 30 k . the final design step is to address the bandwidth requirements, which must be stated as a pair of -3 db frequency points. five times away from a -3 db point is 0.17 db down from passband response, which is better than the required 0.25 db specified. f l = 100hz/5 = 20hz f h = 20khz * 5 = 100khz as stated in the external components section, r 2 and c 2 create a high-pass filter. c 2 1/(2 *20 k *20hz) = 0.397f; use 0.39f. the high frequency pole is the product of the desired frequency pole, f h , and the differential gain, a vd . with a avd = 3 and f h = 100khz, the resulting gbwp = 300khz which is much smaller than the ema1001 gbwp of 2.5mhz. this calculation shows that if a designer has a need to design an amplifier with a higher differential gain, the ema1001 can still be used without running into bandwidth limitations.
esmt/emp EMA1002 elite semiconductor memory technology inc./ elite micropower inc. publication date : may. 2009 revision : 4.0 10/16 figure 2. higher gain audio amplifier the ema1001 is unity-gain stable and requires only gain-setting resistors, an input coupling capacitor, and proper supply bypassing in the typical application. for a closed-loop differential gain of greater than 10, a feedback capacitor (c4) may be needed as shown in figure 2 to bandwidth limit the amplifier. this feedback capacitor creates a low pass filter that eliminates possible high frequency oscillations. care should be taken when calculating the -3db frequency in that an incorrect combination of r3 and c4 will cause rolloff before 20khz. a typical combination of feedback resistor and capacitor that will not produce audio band high frequency rolloff is r3 = 20k and c4 = 25pf. these components result in a -3db point of approximately 320 khz. +
esmt/emp EMA1002 elite semiconductor memory technology inc./ elite micropower inc. publication date : may. 2009 revision : 4.0 11/16 reference design board and layout figure 3. reference design
esmt/emp EMA1002 elite semiconductor memory technology inc./ elite micropower inc. publication date : may. 2009 revision : 4.0 12/16 figure 4. component side & top layer of reference design figure 5. bottom layer of reference design
esmt/emp EMA1002 elite semiconductor memory technology inc./ elite micropower inc. publication date : may. 2009 revision : 4.0 13/16 bill of materials of figure 4 description designator footprint libref value u1 msop-8 EMA1002 msop8 capacitor (semiconductor sim model) c0 cc1608-0603 cap semi 1uf capacitor (semiconductor sim model) c1 cc1608-0603 cap semi 1uf capacitor (semiconductor sim model) c3 cc1608-0603 cap semi 0.39uf capacitor (semiconductor sim model) c4 cc1608-0603 cap semi 100uf semiconductor resistor rin1 cr1608-0603 res semi 20k semiconductor resistor rf1 cr1608-0603 res semi 20k semiconductor resistor r2 cr1608-0603 res semi 1k semiconductor resistor r3 cr1608-0603 res semi 100k semiconductor resistor r4 cr1608-0603 res semi 100k jumper header vertical mount 2x1, jm4 0.1? spacing audio jack j4 3.5mm pcb layout guidelines this section provides practical guidelines for mixed signal pcb layout that involves various digital/analog power and ground traces. designers should note that these are only "rule-of-thumb" recommendations and the actual results will depend heavily on the final layout. general mixed signal layout recommendations power and ground circuits for 2 layer mixed signal design, it is important to isolate the digital power and ground trace paths from the analog power and ground trace paths. star trace routing techniques (bringing individual traces back to a central point rather than daisy chaining traces together in a serial manner) can have a major impact on low level signal performance. star trace routing refers to using individual traces to feed power and ground to each circuit or even device. this technique will require a greater amount of design time but will not increase the final price of the board. the only extra parts required will be some jumpers. single-point power / ground connections the analog power traces should be connected to the digital traces through a single point (link). a "pi-filter" can be helpful in minimizing high frequency noise coupling between the analog and digital sections. it is further recommended to put digital and analog power traces over the corresponding digital and analog ground traces to minimize noise coupling. placement of digital and analog components all digital components and high-speed digital signals traces should be located as far away as possible from analog components and circuit traces. avoiding typical design / layout problems avoid ground loops or running digital and analog traces parallel to each other (side-by-side) on the same pcb layer. when traces must cross over each other do it at 90 degrees. running digital and analog traces at 90 degrees to each other from the top to the bo ttom side as much as possible will minimize capacitive noise coupling and cross talk.
esmt/emp EMA1002 elite semiconductor memory technology inc./ elite micropower inc. publication date : may. 2009 revision : 4.0 14/16 physical dimensions msop-8 package o symbpls min. nom. max. a 1.1 a1 0 0.15 a2 0.75 0.85 0.95 d 3.00 bsc e 4.90 bsc e1 3.00 bsc l 0.4 0.6 0.8 l1 0.95 bsc 0 8 unit: mm
esmt/emp EMA1002 elite semiconductor memory technology inc./ elite micropower inc. publication date : may. 2009 revision : 4.0 15/16 revision history revision date description 4.0 2009.05.05 emp transferred from version 3.1
esmt/emp EMA1002 elite semiconductor memory technology inc./ elite micropower inc. publication date : may. 2009 revision : 4.0 16/16 important notice all rights reserved. no part of this document may be re produced or duplicated in any form or by any means without the prior permission of esmt. the contents contained in this document are believed to be accurate at the time of publication. esmt assumes no responsibility for any error in this document, and reserves the right to change the products or specification in this document without notice. the information contained herein is presented only as a guide or examples for the application of our pr oducts. no responsibility is assumed by esmt for any infringement of patent s, copyrights, or other intellectual property rights of third parties which may result from its use. no license, either express , implied or otherwise, is granted under any patents, copyrights or other intellectual prop erty rights of esmt or others. any semiconductor devices may have i nherently a certain rate of failure. to minimize risks associated with customer's application, adequate design and operating safeguards against injury, damage, or loss from such failure, should be provided by the customer when making application designs. esmt's products are not authorized for use in critical applications such as, but not limited to, life support de vices or system, where failure or abnormal operation may directly aff ect human lives or cause physical injury or property damage. if products described here are to be used for such kinds of application, purchase r must do its own quality assurance testing appropriate to such applications.

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